AO3420 20v n-channel mosfet general description product summary v ds i d (at v gs =10v) 6a r ds(on) (at v gs =10v) < 24m w r ds(on) (at v gs =4.5v) < 27m w r ds(on) (at v gs =2.5v) < 42m w r ds(on) (at v gs =1.8v) < 55m w symbol v ds v gs i dm t j , t stg symbol t 10s steady-state steady-state r q jl w 1.4 maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 63 125 80 maximum junction-to-ambient a v 12 gate-source voltage t a =25c a 65 30 t a =70c power dissipation b p d pulsed drain current c continuous drain current t a =25c i d absolute maximum ratings t a =25c unless otherwise noted 20v drain-source voltage 20 the AO3420 uses advanced trench technology to provi de excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v while retaining a 12v v gs(max) rating. this device is suitable for use as a uni-di rectional or bi-directional load switch. v maximum units parameter c thermal characteristics units parameter typ max 0.9 t a =70c junction and storage temperature range -55 to 150 c/w r q ja 70 100 90 g ds sot23 top view bottom view d g s g s d rev 1: may 2011 www.aosmd.com page 1 of 5
AO3420 symbol min typ max units bv dss 20 v v ds =20v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 0.4 0.75 1.1 v i d(on) 30 a 16 24 t j =125c 23 35 18 27 m w 23 42 m w 31 55 m w g fs 25 s v sd 0.7 1 v i s 2 a c iss 420 525 630 pf c oss 65 95 125 pf c rss 45 75 105 pf r g 0.8 1.7 2.6 w q g (10v) 12.5 nc q g (4.5v) 6 nc q gs 1 nc q gd 2 nc t d(on) 3 ns t r 7.5 ns t d(off) 20 ns t f 6 ns t rr 14 ns q rr 6 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =6a reverse transfer capacitance i f =6a, di/dt=100a/ m s v gs =0v, v ds =10v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a v ds =v gs i d =250 m a v ds =0v, v gs = 12v zero gate voltage drain current gate-body leakage current forward transconductance diode forward voltage r ds(on) static drain-source on-resistance m w i s =1a,v gs =0v v ds =5v, i d =6a v gs =1.8v, i d =2a v gs =4.5v, i d =5a v gs =2.5v, i d =4a gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =10v, i d =6a gate source charge gate drain charge total gate charge body diode reverse recovery charge i f =6a, di/dt=100a/ m s maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =10v, v ds =10v, r l =1.7 w , r gen =3 w a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initialt j =25c. d. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedence which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150c. the soa curve provides a single pulse ratin g. rev 1: may 2011 www.aosmd.com page 2 of 5
AO3420 typical electrical and thermal characteristics 17 52 10 0 18 40 0 5 10 15 20 0 0.5 1 1.5 2 2.5 v gs (volts) figure 2: transfer characteristics (note e) i d (a) 10 15 20 25 30 35 40 45 50 55 60 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m w ww w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics (note e) i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =10v i d =6a v gs =2.5v i d =4a v gs =4.5v i d =5a v gs =1.8v i d =2a 15 20 25 30 35 40 45 0 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m w ww w ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =6a 25c 125c 0 10 20 30 40 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics (note e) i d (a) v gs =3.5v 1.8v 3.5v 4.5v 2.5v 10v v gs =2.5v v gs =1.8v rev 1: may 2011 www.aosmd.com page 3 of 5
AO3420 typical electrical and thermal characteristics 0 2 4 6 8 10 0 5 10 15 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 200 400 600 800 1000 0 5 10 15 20 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss v ds =10v i d =6a 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) power (w) t a =25c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150c t a =25c 100 m s 10ms 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) z q qq q ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =125c/w t on t p d rev 1: may 2011 www.aosmd.com page 4 of 5
AO3420 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform ig v gs - + vd c d u t l v gs v ds isd isd d iode r ecovery t est c ircuit & w aveform s v ds - v ds + i f di/dt i r m rr v dd v dd q = - idt t rr - + v d c d u t v d d v g s v ds v g s r l r g v gs v d s 1 0% 90 % r es istiv e s w itch ing t e st c ircu it & w a ve fo rm s t t r d (o n ) t o n t d (o ff) t f t o ff rev 1: may 2011 www.aosmd.com page 5 of 5
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